I-Littelfuse yazisa i-IX4352NE abaqhubi besango elisezantsi le-SiC MOSFETs kunye nee-IGBT zamandla aphezulu

I-IXYS, inkokeli yehlabathi jikelele kwi-semiconductors yamandla, iqalise umqhubi omtsha owenziwe ngamandla we-silicon carbide (SiC) MOSFETs kunye ne-high-power insulated gate bipolar transistors (IGBTs) kwizicelo zoshishino.Umqhubi we-IX4352NE we-innovative wenzelwe ukubonelela ngokusesikweni kunye nexesha lokucima, ukunciphisa ngokufanelekileyo ukutshintshwa kwelahleko kunye nokuphucula i-dV/dt immunity.

Umqhubi we-IX4352NE ngumtshintshi wemidlalo yoshishino, enika uluhlu lweenzuzo kwizicelo zoshishino.Ikulungele ngokufanelekileyo ukuqhuba ii-SiC MOSFETs kwiisethingi ezahlukeneyo, kubandakanywa iitshaja ezisebhodini kunye nezingaphandle kwebhodi, ukulungiswa kwezinto zamandla (PFC), iziguquli ze-DC/DC, abalawuli beemoto kunye nabaguquli bamandla oshishino.Oku kuguquguquka kuyenza ibe yi-asethi yexabiso kwiintlobo ngeentlobo zezicelo zamashishini apho ulawulo lwamandla olusebenzayo noluthembekileyo lubalulekile.

Enye yeempawu eziphambili zomqhubi we-IX4352NE kukukwazi ukubonelela ngokusesikweni kunye nokucima ixesha.Olu phawu luvumela ulawulo oluchanekileyo lwenkqubo yokutshintsha, ukunciphisa ilahleko kunye nokwandisa ukusebenza kakuhle.Ngokulungisa ixesha lokutshintsha utshintsho, umqhubi uqinisekisa ukuba i-semiconductors yamandla isebenza ngokufanelekileyo, ngaloo ndlela ikwandisa amandla ombane kunye nokunciphisa ukuveliswa kobushushu.

Ukongeza kulawulo oluchanekileyo lwexesha, umqhubi we-IX4352NE ubonelela ngokhuseleko lwe-dV/dt olwandisiweyo.Olu phawu lubaluleke kakhulu kusetyenziso lwamandla aphezulu, apho utshintsho olukhawulezayo lombane lunokubangela i-voltage spikes kwaye lubangele umonakalo onokwenzeka kwii-semiconductors.Ngokubonelela nge-immunity eyomeleleyo ye-dV/dt, umqhubi uqinisekisa ukusebenza okuthembekileyo nokukhuselekileyo kwee-SiC MOSFETs kunye nee-IGBTs kwiindawo zoshishino, naxa kukho umngeni wokudlula kwamandla ombane.

Ukuqaliswa komqhubi we-IX4352NE kubonisa ukuqhubela phambili okubonakalayo kubuchwepheshe be-semiconductor yamandla.Ukujika kwayo okulungiselelweyo kunye nexesha lokucima okudityaniswe nokukhuselwa kwe-dV/dt kuyenza ilungele usetyenziso lwemizi-mveliso apho ukusebenza kakuhle, ukuthembeka kunye nokusebenza kubalulekile.Umqhubi we-IX4352NE uyakwazi ukuqhuba ii-SiC MOSFETs kwiindawo ezahlukeneyo zemizi-mveliso kwaye kulindeleke ukuba abe nefuthe elihlala lihleli kushishino lombane we-elektroniki.

Ukongeza, ukuhambelana komqhubi kunye neenkqubo ezahlukeneyo zemizi-mveliso, kubandakanywa iitshaja ezingaphakathi kunye nezingaphandle kwebhodi, ukulungiswa kwezinto zamandla, iziguquli ze-DC/DC, izilawuli zeemoto kunye neziguquli zamandla emizi-mveliso, ziqaqambisa ukuguquguquka kwayo kunye nokubanakho ukwamkelwa okubanzi.Njengoko amashishini aqhubeka efuna izisombululo zolawulo olusebenzayo kunye nezithembekileyo, umqhubi we-IX4352NE ukwindawo efanelekileyo ukuhlangabezana nezi mfuno eziguqukayo kunye nokuqhubela phambili izinto ezintsha kwi-electronic power powers.

Isishwankathelo, umqhubi we-IXYS we-IX4352NE umele ukutsiba okukhulu phambili kwitekhnoloji ye-semiconductor yamandla.Ukucinywa kwayo okulungiselelweyo kunye nokucima ixesha kunye nokhuseleko oluphuculweyo lwe-dV/dt luyenza ilungele ukuqhuba ii-SiC MOSFETs kunye nee-IGBTs kwiinkqubo ezahlukeneyo zemizi-mveliso.Ngamandla okuphucula ulawulo lwamandla oshishino, ukuthembeka kunye nokusebenza, umqhubi we-IX4352NE kulindeleke ukuba adlale indima ephambili ekubumbeni ikamva le-elektroniki yamandla.